Wideband Modeling of CMOS Schottky Barrier Diode Detectors for THz Radiometry

A complete system modeling and characterization of a wideband differential terahertz (THz) direct detector, integrated in commercial CMOS technology, is presented. The detector consists recently developed double leaky-slot lens antenna that operates from 200 to 600 GHz combination with Schottky barrier diode (SBD) detection circuit. proposed methodology, starting low-frequency measurements on standalone SBD, able adequately model the spectral radiometric performance. noise-equivalent power (NEP) characterized 325 500 excellent agreement model. measured NEP, 20 pW/√Hz minimum 90 frequency averaged, compromised respect average NEP 2.7 was initially predicted by simulations using process design kit (PDK) model, since available SBDs are operating beyond their cutoff frequency. diodes models provided PDK proved be inaccurate predicting circuit behavior at these high frequencies. By analysis approaches, an accurate antenna-detector codesign could applied for future passive THz imaging applications based technologies.